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| Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.650.15 +0.2 unit: mm 0.650.15 2.8 -0.3 1.5 -0.05 +0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 1.45 Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO VGSO ID IG PD Tch Tstg 55 -55 -55 30 10 200 150 -55 to +150 V V V mA mA mW C C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 2B s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDC VGSC gm Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 IG = -100A, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100k f = 100Hz 2.5 7.5 6.5 1.9 2.5 -55 -80 -5 min 1 typ max 20 -10 Unit mA nA V V mS pF pF dB Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF * IDSS rank classification Runk IDSS (mA) P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR S 10 to 20 2BS Marking Symbol 0 to 0.1 Parameter Symbol Ratings Unit 0.1 to 0.3 0.40.2 0.8 s Absolute Maximum Ratings (Ta = 25C) +0.2 1.1 -0.1 0.16 -0.06 +0.1 1 Silicon Junction FETs (Small Signal) PD Ta 240 5 Ta=25C 200 2SK374 ID VDS 10 Ta=25C ID VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 160 Drain current ID (mA) VGS=0V 3 VGS=0 - 0.2V 6 - 0.2V 120 - 0.4V 4 - 0.6V 2 - 0.8V -1.0V 2 - 0.4V - 0.6V 80 40 1 - 0.8V -1.0V -1.2V 0 0.6 0 2 4 6 8 10 12 0 0 20 40 60 80 100 120 140 160 0 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Drain to source voltage VDS (V) Drain to source voltage VDS (V) ID VGS 16 VDS=10V 14 12 gm VGS 12 VDS=10V Ta=25C gm ID VDS=10V Ta=25C Mutual conductance gm (mS) 10 Mutual conductance gm (mS) 10 Drain current ID (mA) 12 10 8 6 4 75C 2 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 8 8 IDSS=7.5mA Ta=-25C 25C 6 6 4 4 2 2 0 -2.0 0 -1.6 -1.2 - 0.8 - 0.4 0 0 2 4 6 8 10 Gate to source voltage VGS (V) Gate to source voltage VGS (V) Drain current ID (mA) Ciss VDS VGS=0 Ta=25C 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 Coss VDS Output capacitance (Common source) Coss (pF) 8 VGS=0 Ta=25C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Input capacitance (Common source) Ciss (pF) 16 Drain to source voltage VDS (V) Drain to source voltage VDS (V) 2 |
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